Modeling of Electron Mobility in Strained Si Devices
نویسنده
چکیده
A model describing the anisotropic electron mobility in strained Si has been developed. Our analytical model includes the effect of strain-induced splitting of the conduction band valleys in Si, inter-valley scattering, and doping dependence. Monte Carlo simulations were performed to verify the results for the complete range of Ge contents and for a general orientation of the SiGe buffer. Our mobility model is suitable for implementation into a conventional TCAD simulation tool. Keywords—strained Si, SiGe, mobility model, inter-valley scattering, Technology CAD, Monte Carlo simulations
منابع مشابه
Fabrication and Analysis of Deep Submicron Strained - Si N - MOSFET ’ s
Deep submicron strained-Si n-MOSFET’s were fabricated on strained Si/relaxed Si0 8Ge0 2 heterostructures. Epitaxial layer structures were designed to yield well-matched channel doping profiles after processing, allowing comparison of strained and unstrained Si surface channel devices. In spite of the high substrate doping and high vertical fields, the MOSFET mobility of the strained-Si devices ...
متن کاملHigh Mobility Strained Si/SiGe Heterostructure MOSFETs
Strained Siand SiGe-based heterostructure MOSFETs grown on relaxed SiGe virtual substrates exhibit dramatic electron and hole mobility enhancements over bulk Si, making them promising candidates for next generation CMOS devices. The most heavily investigated heterostructures consist of a single strained Si layer grown upon a relaxed SiGe substrate. While this configuration offers significant pe...
متن کاملSilicon-Germanium Interdiffusion and Its Impacts on Enhanced Mobility MOSFETs
As complementary metal-oxide-semiconductor field-effect transistors (MOSFETs) scale, strained Si and SiGe technology have received more attention as a means of enhancing performance via improved carrier mobility. One of the biggest challenges for strained Si and SiGe technology is Si-Ge interdiffusion during thermal processing. Two different aspects of Si-Ge interdiffusion are explored in this ...
متن کاملInvestigation of the electron transport and electrostatics of nanoscale strained Si/Si/Ge heterostructure MOSFETs
This thesis presents work aimed at investigating the possible benefit of strained-Si/SiGe heterostructure MOSFETs designed for nanoscale (sub-50-nm) gate lengths with the aid of device fabrication and electrical measurements combined with computer simulation. MOSFET devices fabricated on bulk-Si material are scaled in order to achieve gains in performance and integration. However, as device dim...
متن کاملElectron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
We show by simulation that electron mobility and velocity overshoot are greater when strained inversion layers are grown on SiGe-On-insulator substrates ~strained Si/SiGe-OI! than when unstrained silicon-on-insulator ~SOI! devices are employed. In addition, mobility in these strained inversion layers is only slightly degraded compared with strained bulk Si/SiGe inversion layers, due to the phon...
متن کامل